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Nanocrystalline diamond (NCD) film was used as a functional part of gas sensor. The gas sensing properties of H-terminated nanocrystalline diamond films were examined to oxidizing gases (i.e., COCl 2 and humid air). Pronounced increase in the surface conductivity (3 orders of magnitude) was found after sensor exposure to phosgene gas and was explained by the surface transfer doping effect...
Polytetrafluoroethylene (PTFE) samples were exposed to argon plasma discharge and the changes of the PTFE surface properties were studied by different methods. Surface wettability and aging of the plasma modified PTFE were derived from the contact angle measured by standard goniometry. Electrokinetical potential (ζ-potential) was determined by SurPASS Instrument. The ζ-potential and the contact angle...
We show that careful preparation conditions enable the preparation of high quality nanoribbons capable of room-temperature lasing covering the complete spectral range from near infrared (NIR) to ultraviolet (UV). Two ternary compound II-VI semiconductors, CdS 1−X Se X and Zn Y Cd 1−Y S, can be grown on single c-Si substrates to achieve this task. High-resolution transmission...
Low temperature analysis of diffusion and intermixing of Co–Si systems are very important in applications for microelectronics and Ultra Large Scale Integration (ULSI). In this communication a comprehensive report has been given on degradation and diffusion processes in the Si(substrate)/Co(150 nm)/Ta(10 nm) system. The samples were prepared by DC magnetron sputtering and were annealed in argon ambient...
Immobilization of the protein streptavidin to the surface of polymethyl methacrylate (PMMA) polymer was studied by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Different protocols were used to attach streptavidin to the PMMA surface: physical adsorption and chemical coupling. The influence of oxygen plasma treatment on the efficiency of streptavidin binding was studied...
Nanostructured polymer electrolytes are very attractive materials for components of batteries and opto-electronic devices. (PEO) 8 ZnCl 2 polymer electrolytes and nanocomposites were prepared using Poly(ethylene oxide) (PEO) γ-irradiated with a selected dose of 529 kGy and with an addition of 10% of TiO 2 nanograins. The influence of the added nanosize TiO 2 grains...
The reactive ion etching (RIE) technique was used to etch polycrystalline diamond thin films. In this study we investigate the influence of process parameters (total pressure, rf power, gas composition) of standard capacitively coupled plasma RIE system on the etching rate of diamond films. The surface morphology of etched diamond films was characterized by Scanning Electron Microscopy and the chemical...
Cr/Au (40/65 nm) metal layers have been deposited by thermal evaporation onto n-GaN epitaxial layers grown by metal-organic chemical-vapour deposition (MOCVD) on a sapphire substrate. The samples have been annealed at 400, 700 and 900 °C for 10 min in vacuum. Techniques of TEM, EDS, HRTEM, FESEM, XRD and I–V characteristics have been used to characterize the micro-, and nanostructure, morphology,...
Depth profile analysis of solar cells was performed by Secondary Neutral Mass Spectrometry (SNMS), which is a suitable technique for quantitative analysis of the composition of layered structures. However, in the case of insulating samples or samples prepared on non-conductive substrates (e.g. microslide, oxidized silicon wafer) the charge accumulation on the sample surface due to ion beam bombardment...
We compare structural and optical properties of Ge quantum dot lattices in amorphous silica matrix obtained by two recently published techniques for the preparation of regularly ordered quantum dot lattices in amorphous matrices. The first technique is self-ordering growth of (Ge + SiO 2 )/SiO 2 multilayer at an elevated substrate temperature where diffusion and surface morphology...
We investigated the possibility of achieving p-type zinc oxide (ZnO) by RF diode sputtering and gallium–nitrogen co-doping. ZnO:Ga:N thin films were prepared with a different N 2 content in Ar/N 2 working gas, ranging from 0 to 100%, and at a varying substrate temperature, from room temperature (RT) to 300 °C. A hole conduction with maximum carrier concentration of 2.6 × 10 18...
FeO x , TiO 2 and CeO x layers were deposited by pulsed laser deposition (PLD) technique onto Au films or Au nanoparticles supported on SiO 2 /Si(100). The samples were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS) and their reactivity was studied in catalytic CO oxidation. Comparison was made...
ZnO layer in a role of passivation of the AlGaN/GaN-based high electron mobility transistors (HEMTs) is presented. The thin layer is deposited by pulsed laser deposition technique. It is fully compatible with the process technology of high electron mobility transistors prepared on AlGaN/GaN heterostructures due to its physical properties similar to the GaN. We have succeeded to (1) suppress the gate...
The embedding of metallic nanoparticles in the traditional optical materials (e.g. SiO 2 ) gives us the possibility to create new optical materials. Metallic particles of nanometric dimensions can be transparent in wide spectral ranges of light. The incorporation of nanocrystal inclusions in such nanocomposites provides the benefit of targeted manipulations of their macroscopic optical response...
Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique was used to deposit films of Poly(9,9-dioctylfluorene) – PFO and Methoxy Ge Triphenylcorrole [Ge(TPC)OCH3]. The PFO was dissolved in different matrices, like chloroform-CHCl3, tetrahydrofuran – THF and toluene with a 0.5 wt % concentration, while Ge(TPC)OCH3 was diluted in THF with a concentration of 0.01 wt %. The frozen targets were irradiated...
Diamond thin films were grown by linear antenna microwave plasma CVD process over large areas (up to 20 × 10 cm 2 ) from a hydrogen based gas mixture. The influence of the gas composition (H 2 , CH 4 , CO 2 ) and total gas pressure (0.1 and 2 mbar) on the film growth is presented. For CH 4 /H 2 gas mixtures, the surface crystal size does not show dependence...
Zinc oxide films doped by gallium were deposited using RF diode sputtering from a ceramic ZnO + 2% Ga 2 O 3 target on Corning glass in argon atmosphere. Samples were supported in three different positions against a substrate holder – horizontal, and at 60 and 80° to the horizontal position. Two series of samples 700–1000 nm in thickness were prepared: one at room temperature (RT) and...
In this article the modification of surface morphology of ZnO:Ga (GZO) thin films by ion sputter etching is presented. GZO thin films were prepared at room temperature on Corning glass substrates by both normal and oblique angle RF diode sputtering from ZnO:2%Ga ceramic target in Ar gas. Ion sputter etching was performed by RF re-sputtering of GZO thin films on substrates. During RF sputter etching,...
In this report, we present a study on the exploitation of nanostructure-thin film interfaces. Here, the objective is to utilize such interfaces for developing nanostructures for advanced sensing devices, while using state-of-the-art microelectronic technology that enables batch production. In this context, growth of ZnO nanostructures on the GaN/AlGaN heterostructure layers was studied. A fabrication...
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